PMZ200UNEYL Pricing (USD) [1154584PC Stock]
- 1 pcs$0.03204
- 10,000 pcs$0.02805
- Nimewo Pati:
- PMZ200UNEYL
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V SOT883. ESD Suppressors / TVS Diodes 30V N-Channel Trench MOSFET
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMZ200UNEYL electronic components. PMZ200UNEYL can be shipped within 24 hours after order. If you have any demands for PMZ200UNEYL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMZ200UNEYL Atribi pwodwi yo
Nimewo Pati :
PMZ200UNEYL
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 30V SOT883
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
250 mOhm @ 1.4A, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.7nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
89pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
350mW (Ta), 6.25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1006-3
Pake / Ka :
SC-101, SOT-883
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