IXYS - IXTA36N30P

KEY Part #: K6399107

IXTA36N30P Pricing (USD) [26950PC Stock]

  • 1 pcs$1.68347
  • 10 pcs$1.50279
  • 100 pcs$1.23229
  • 500 pcs$0.94668
  • 1,000 pcs$0.79840

Nimewo Pati:
IXTA36N30P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 300V 36A TO-263.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Tiristors - SCR - Modil yo and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXTA36N30P electronic components. IXTA36N30P can be shipped within 24 hours after order. If you have any demands for IXTA36N30P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA36N30P Atribi pwodwi yo

Nimewo Pati : IXTA36N30P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 300V 36A TO-263
Seri : PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 110 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2250pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXTA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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