[85PC Stock]
- Nimewo Pati:
- 2SJ162-E
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET P-CH 160V 7A TO-3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - JFETs, Transistors - IGBTs - Single, Modil pouvwa chofè, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America 2SJ162-E electronic components. 2SJ162-E can be shipped within 24 hours after order. If you have any demands for 2SJ162-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SJ162-E Atribi pwodwi yo
Nimewo Pati :
2SJ162-E
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET P-CH 160V 7A TO-3P
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
160V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
900pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P
Pake / Ka :
TO-3P-3, SC-65-3
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