[2720PC Stock]
- Nimewo Pati:
- RQK0607AQDQS#H1
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RQK0607AQDQS#H1 electronic components. RQK0607AQDQS#H1 can be shipped within 24 hours after order. If you have any demands for RQK0607AQDQS#H1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQK0607AQDQS#H1 Atribi pwodwi yo
Nimewo Pati :
RQK0607AQDQS#H1
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
270 mOhm @ 1.2A, 4.5V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
2nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
170pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.5W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
UPAK
Pake / Ka :
TO-243AA
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