[13622PC Stock]
- Nimewo Pati:
- IRLL2703PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 3.9A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Tiristors - TRIACs, Diodes - Zener - Single, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLL2703PBF electronic components. IRLL2703PBF can be shipped within 24 hours after order. If you have any demands for IRLL2703PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLL2703PBF Atribi pwodwi yo
Nimewo Pati :
IRLL2703PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 3.9A SOT223
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 5V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
530pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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