Advanced Linear Devices Inc. - ALD1101BPAL

KEY Part #: K6521982

ALD1101BPAL Pricing (USD) [16588PC Stock]

  • 1 pcs$2.48449
  • 50 pcs$1.70754

Nimewo Pati:
ALD1101BPAL
Manifakti:
Advanced Linear Devices Inc.
Detaye deskripsyon:
MOSFET 2N-CH 10.6V 8DIP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Advanced Linear Devices Inc. ALD1101BPAL electronic components. ALD1101BPAL can be shipped within 24 hours after order. If you have any demands for ALD1101BPAL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ALD1101BPAL Atribi pwodwi yo

Nimewo Pati : ALD1101BPAL
Manifakti : Advanced Linear Devices Inc.
Deskripsyon : MOSFET 2N-CH 10.6V 8DIP
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Matched Pair
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 10.6V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
RD sou (Max) @ Id, Vgs : 75 Ohm @ 5V
Vgs (th) (Max) @ Id : 1V @ 10µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 500mW
Operating Tanperati : 0°C ~ 70°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 8-PDIP