[4153PC Stock]
- Nimewo Pati:
- SI5511DC-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 30V 4A 1206-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI5511DC-T1-GE3 electronic components. SI5511DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5511DC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5511DC-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI5511DC-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 30V 4A 1206-8
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A, 3.6A
RD sou (Max) @ Id, Vgs :
55 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.1nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
435pF @ 15V
Pouvwa - Max :
3.1W, 2.6W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
1206-8 ChipFET™
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