SSM6N16FUTE85LF Pricing (USD) [1230545PC Stock]
- 1 pcs$0.03006
- Nimewo Pati:
- SSM6N16FUTE85LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 0.1A US6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Tiristors - SCR, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM6N16FUTE85LF electronic components. SSM6N16FUTE85LF can be shipped within 24 hours after order. If you have any demands for SSM6N16FUTE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N16FUTE85LF Atribi pwodwi yo
Nimewo Pati :
SSM6N16FUTE85LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2N-CH 20V 0.1A US6
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100mA
RD sou (Max) @ Id, Vgs :
3 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id :
1.1V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
9.3pF @ 3V
Pouvwa - Max :
200mW
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
US6
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