Vishay Siliconix - SQJ980AEP-T1_GE3

KEY Part #: K6525274

SQJ980AEP-T1_GE3 Pricing (USD) [164478PC Stock]

  • 1 pcs$0.22488
  • 3,000 pcs$0.19003

Nimewo Pati:
SQJ980AEP-T1_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2 N-CH 75V POWERPAK SO8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SQJ980AEP-T1_GE3 electronic components. SQJ980AEP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ980AEP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ980AEP-T1_GE3 Atribi pwodwi yo

Nimewo Pati : SQJ980AEP-T1_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2 N-CH 75V POWERPAK SO8
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Tc)
RD sou (Max) @ Id, Vgs : 50 mOhm @ 3.8A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 790pF @ 35V
Pouvwa - Max : 34W (Tc)
Operating Tanperati : -55°C ~ 175°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SO-8 Dual
Pake Aparèy Founisè : PowerPAK® SO-8 Dual