Nimewo Pati :
IPP80P04P4L06AKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH TO220-3
Seri :
Automotive, AEC-Q101, OptiMOS™
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
104nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
6580pF @ 25V
Disipasyon Pouvwa (Max) :
88W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3-1