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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDD6530A

ON Semiconductor - FDD6530A

KEY Part #: K6409601

FDD6530A Pricing (USD) [206666PC Stock]

  • 1 pcs$0.17897
  • 2,500 pcs$0.17334
Nimewo Pati:
FDD6530A
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 21A D-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - JFETs and Diodes - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDD6530A electronic components. FDD6530A can be shipped within 24 hours after order. If you have any demands for FDD6530A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD6530A Atribi pwodwi yo

Nimewo Pati : FDD6530A
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 20V 21A D-PAK
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 32 mOhm @ 8A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 9nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 710pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.3W (Ta), 33W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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