IXYS - IXFH36N55Q

KEY Part #: K6411291

IXFH36N55Q Pricing (USD) [8260PC Stock]

  • 1 pcs$5.51607
  • 30 pcs$5.48862

Nimewo Pati:
IXFH36N55Q
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 550V 36A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - IGBTs - Single and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in IXYS IXFH36N55Q electronic components. IXFH36N55Q can be shipped within 24 hours after order. If you have any demands for IXFH36N55Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH36N55Q Atribi pwodwi yo

Nimewo Pati : IXFH36N55Q
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 550V 36A TO-247
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 550V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 160 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 128nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3

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