IPB60R120C7ATMA1 Pricing (USD) [39101PC Stock]
- 1 pcs$1.06065
- 1,000 pcs$1.05537
- Nimewo Pati:
- IPB60R120C7ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 650V 19A TO263-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPB60R120C7ATMA1 electronic components. IPB60R120C7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R120C7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB60R120C7ATMA1 Atribi pwodwi yo
Nimewo Pati :
IPB60R120C7ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V 19A TO263-3
Seri :
CoolMOS™ C7
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
120 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 390µA
Chaje Gate (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1500pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
92W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-3
Pake / Ka :
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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