Manifakti :
Alpha & Omega Semiconductor Inc.
Deskripsyon :
MOSFET N/P-CH 60V 8SOIC
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A (Ta), 3.2A (Ta)
RD sou (Max) @ Id, Vgs :
56 mOhm @ 4.5A, 10V, 105 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10.5nC @ 10V, 20nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
540pF @ 30V, 1120pF @ 30V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC