Nimewo Pati :
TPN2R503NC,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 30V 40A 8TSON-ADV
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
40nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2230pF @ 15V
Disipasyon Pouvwa (Max) :
700mW (Ta), 35W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSON Advance (3.3x3.3)