Diodes Incorporated - DMN3055LFDB-7

KEY Part #: K6523040

DMN3055LFDB-7 Pricing (USD) [518584PC Stock]

  • 1 pcs$0.07132
  • 3,000 pcs$0.06016

Nimewo Pati:
DMN3055LFDB-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2 N-CH 5A UDFN2020-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN3055LFDB-7 electronic components. DMN3055LFDB-7 can be shipped within 24 hours after order. If you have any demands for DMN3055LFDB-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3055LFDB-7 Atribi pwodwi yo

Nimewo Pati : DMN3055LFDB-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2 N-CH 5A UDFN2020-6
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : -
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)
RD sou (Max) @ Id, Vgs : 40 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5.3nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 458pF @ 15V
Pouvwa - Max : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-UDFN Exposed Pad
Pake Aparèy Founisè : U-DFN2020-6 (Type B)