Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N/P-CH 20V 2.5A TSST8
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate, 1.5V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.5A, 2.4A
RD sou (Max) @ Id, Vgs :
72 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
3.6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
260pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
8-TSST