IXFA22N65X2 Pricing (USD) [23496PC Stock]
- 1 pcs$1.92586
- 10 pcs$1.72093
- 100 pcs$1.41117
- 500 pcs$1.08410
- 1,000 pcs$0.91430
- Nimewo Pati:
- IXFA22N65X2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 650V 22A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - JFETs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - IGBTs - Modil yo and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFA22N65X2 electronic components. IXFA22N65X2 can be shipped within 24 hours after order. If you have any demands for IXFA22N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA22N65X2 Atribi pwodwi yo
Nimewo Pati :
IXFA22N65X2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 650V 22A TO-263
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
160 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2310pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
390W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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