IXYS - IXFN100N50P

KEY Part #: K6398220

IXFN100N50P Pricing (USD) [3219PC Stock]

  • 1 pcs$14.12602
  • 10 pcs$13.06738
  • 25 pcs$12.00799
  • 100 pcs$11.16029
  • 250 pcs$10.24204

Nimewo Pati:
IXFN100N50P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 90A SOT-227B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in IXYS IXFN100N50P electronic components. IXFN100N50P can be shipped within 24 hours after order. If you have any demands for IXFN100N50P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN100N50P Atribi pwodwi yo

Nimewo Pati : IXFN100N50P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 90A SOT-227B
Seri : PolarHV™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 49 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 240nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 20000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1040W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC