IRFI4229PBF Pricing (USD) [25621PC Stock]
- 1 pcs$1.54245
- 10 pcs$1.37675
- 100 pcs$1.07113
- 500 pcs$0.86736
- 1,000 pcs$0.73150
- Nimewo Pati:
- IRFI4229PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 250V 19A TO-220FP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Tiristors - SCR, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFI4229PBF electronic components. IRFI4229PBF can be shipped within 24 hours after order. If you have any demands for IRFI4229PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI4229PBF Atribi pwodwi yo
Nimewo Pati :
IRFI4229PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 250V 19A TO-220FP
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
46 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
4480pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
46W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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