STMicroelectronics - STI30NM60N

KEY Part #: K6415460

[12402PC Stock]


    Nimewo Pati:
    STI30NM60N
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    MOSFET N-CH 600V 25A I2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STI30NM60N electronic components. STI30NM60N can be shipped within 24 hours after order. If you have any demands for STI30NM60N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STI30NM60N Atribi pwodwi yo

    Nimewo Pati : STI30NM60N
    Manifakti : STMicroelectronics
    Deskripsyon : MOSFET N-CH 600V 25A I2PAK
    Seri : MDmesh™ II
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 130 mOhm @ 12.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 91nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 2700pF @ 50V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 190W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I2PAK (TO-262)
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA