BSD816SNH6327XTSA1 Pricing (USD) [1259547PC Stock]
- 1 pcs$0.03148
- 3,000 pcs$0.03132
- Nimewo Pati:
- BSD816SNH6327XTSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 20V 1.4A SOT363.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSD816SNH6327XTSA1 electronic components. BSD816SNH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSD816SNH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSD816SNH6327XTSA1 Atribi pwodwi yo
Nimewo Pati :
BSD816SNH6327XTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 20V 1.4A SOT363
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 2.5V
RD sou (Max) @ Id, Vgs :
160 mOhm @ 1.4A, 2.5V
Vgs (th) (Max) @ Id :
0.95V @ 3.7µA
Chaje Gate (Qg) (Max) @ Vgs :
0.6nC @ 2.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
180pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SOT363-6
Pake / Ka :
6-VSSOP, SC-88, SOT-363
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