Renesas Electronics America - NP75P03YDG-E1-AY

KEY Part #: K6405596

NP75P03YDG-E1-AY Pricing (USD) [1610PC Stock]

  • 2,500 pcs$0.40357

Nimewo Pati:
NP75P03YDG-E1-AY
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET P-CH 30V 75A 8HSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - JFETs and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Renesas Electronics America NP75P03YDG-E1-AY electronic components. NP75P03YDG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP75P03YDG-E1-AY, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NP75P03YDG-E1-AY Atribi pwodwi yo

Nimewo Pati : NP75P03YDG-E1-AY
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET P-CH 30V 75A 8HSON
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 6.2 mOhm @ 37.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 141nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4800pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Ta), 138W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-HSON
Pake / Ka : 8-SMD, Flat Lead Exposed Pad

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