Nimewo Pati :
BSM080D12P2C008
Manifakti :
Rohm Semiconductor
Deskripsyon :
SIC POWER MODULE-1200V-80A
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 13.2mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
800pF @ 10V
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Module