Rohm Semiconductor - BSM080D12P2C008

KEY Part #: K6522057

BSM080D12P2C008 Pricing (USD) [302PC Stock]

  • 1 pcs$153.19229
  • 10 pcs$147.91004

Nimewo Pati:
BSM080D12P2C008
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
SIC POWER MODULE-1200V-80A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor BSM080D12P2C008 electronic components. BSM080D12P2C008 can be shipped within 24 hours after order. If you have any demands for BSM080D12P2C008, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM080D12P2C008 Atribi pwodwi yo

Nimewo Pati : BSM080D12P2C008
Manifakti : Rohm Semiconductor
Deskripsyon : SIC POWER MODULE-1200V-80A
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : 4V @ 13.2mA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 10V
Pouvwa - Max : 600W
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module