Nexperia USA Inc. - PMDPB95XNE2X

KEY Part #: K6523054

PMDPB95XNE2X Pricing (USD) [461720PC Stock]

  • 1 pcs$0.08051
  • 3,000 pcs$0.08011

Nimewo Pati:
PMDPB95XNE2X
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET 2 N-CH 30V 2.7A 6HUSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PMDPB95XNE2X electronic components. PMDPB95XNE2X can be shipped within 24 hours after order. If you have any demands for PMDPB95XNE2X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMDPB95XNE2X Atribi pwodwi yo

Nimewo Pati : PMDPB95XNE2X
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET 2 N-CH 30V 2.7A 6HUSON
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.7A (Ta)
RD sou (Max) @ Id, Vgs : 99 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id : 1.25V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 258pF @ 15V
Pouvwa - Max : 510mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-UDFN Exposed Pad
Pake Aparèy Founisè : 6-HUSON-EP (2x2)