Nexperia USA Inc. - PMXB120EPEZ

KEY Part #: K6421533

PMXB120EPEZ Pricing (USD) [735924PC Stock]

  • 1 pcs$0.05026
  • 5,000 pcs$0.04383

Nimewo Pati:
PMXB120EPEZ
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET P-CH 30V 2.4A 3DFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMXB120EPEZ Atribi pwodwi yo

Nimewo Pati : PMXB120EPEZ
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET P-CH 30V 2.4A 3DFN
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 120 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 309pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 400mW (Ta), 8.3W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DFN1010D-3
Pake / Ka : 3-XDFN Exposed Pad