PMXB120EPEZ Pricing (USD) [735924PC Stock]
- 1 pcs$0.05026
- 5,000 pcs$0.04383
- Nimewo Pati:
- PMXB120EPEZ
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET P-CH 30V 2.4A 3DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMXB120EPEZ electronic components. PMXB120EPEZ can be shipped within 24 hours after order. If you have any demands for PMXB120EPEZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMXB120EPEZ Atribi pwodwi yo
Nimewo Pati :
PMXB120EPEZ
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET P-CH 30V 2.4A 3DFN
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
120 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
309pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
400mW (Ta), 8.3W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1010D-3
Pake / Ka :
3-XDFN Exposed Pad
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