Renesas Electronics America - NP75N04YUG-E1-AY

KEY Part #: K6401391

NP75N04YUG-E1-AY Pricing (USD) [3067PC Stock]

  • 2,500 pcs$0.34652

Nimewo Pati:
NP75N04YUG-E1-AY
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 40V 75A 8HSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Renesas Electronics America NP75N04YUG-E1-AY electronic components. NP75N04YUG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP75N04YUG-E1-AY, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NP75N04YUG-E1-AY Atribi pwodwi yo

Nimewo Pati : NP75N04YUG-E1-AY
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 40V 75A 8HSON
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.8 mOhm @ 37.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 116nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6450pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Ta), 138W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-HSON
Pake / Ka : 8-SMD, Flat Lead Exposed Pad