Diodes Incorporated - DMG3418L-7

KEY Part #: K6416266

DMG3418L-7 Pricing (USD) [893743PC Stock]

  • 1 pcs$0.04139
  • 3,000 pcs$0.03759

Nimewo Pati:
DMG3418L-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 30V 4A SOT23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - RF and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMG3418L-7 electronic components. DMG3418L-7 can be shipped within 24 hours after order. If you have any demands for DMG3418L-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG3418L-7 Atribi pwodwi yo

Nimewo Pati : DMG3418L-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 30V 4A SOT23
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 10V
RD sou (Max) @ Id, Vgs : 60 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5.5nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 464.3pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.4W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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