Renesas Electronics America - HAT2166H-EL-E

KEY Part #: K6418928

HAT2166H-EL-E Pricing (USD) [83500PC Stock]

  • 1 pcs$0.49919
  • 2,500 pcs$0.49670

Nimewo Pati:
HAT2166H-EL-E
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 30V 45A LFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Renesas Electronics America HAT2166H-EL-E electronic components. HAT2166H-EL-E can be shipped within 24 hours after order. If you have any demands for HAT2166H-EL-E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HAT2166H-EL-E Atribi pwodwi yo

Nimewo Pati : HAT2166H-EL-E
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 30V 45A LFPAK
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 45A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.8 mOhm @ 22.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4400pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 25W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK
Pake / Ka : SC-100, SOT-669