Vishay Siliconix - SIHF065N60E-GE3

KEY Part #: K6399890

SIHF065N60E-GE3 Pricing (USD) [11989PC Stock]

  • 1 pcs$3.43746

Nimewo Pati:
SIHF065N60E-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET EF SERIES 600V TO-220 FUL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIHF065N60E-GE3 electronic components. SIHF065N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHF065N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHF065N60E-GE3 Atribi pwodwi yo

Nimewo Pati : SIHF065N60E-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET EF SERIES 600V TO-220 FUL
Seri : E
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 65 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2700pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 39W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220 Full Pack
Pake / Ka : TO-220-3 Full Pack

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