Nimewo Pati :
APTMC120HRM40CT3AG
Manifakti :
Microsemi Corporation
Deskripsyon :
POWER MODULE - SIC MOSFET
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
73A (Tc)
RD sou (Max) @ Id, Vgs :
34 mOhm @ 50A, 20V
Vgs (th) (Max) @ Id :
3V @ 12.5mA
Chaje Gate (Qg) (Max) @ Vgs :
161nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
2788pF @ 1000V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP3