Infineon Technologies - IPB60R099C6ATMA1

KEY Part #: K6399791

IPB60R099C6ATMA1 Pricing (USD) [27417PC Stock]

  • 1 pcs$1.50321

Nimewo Pati:
IPB60R099C6ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 600V 37.9A TO263.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPB60R099C6ATMA1 electronic components. IPB60R099C6ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R099C6ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB60R099C6ATMA1 Atribi pwodwi yo

Nimewo Pati : IPB60R099C6ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 600V 37.9A TO263
Seri : CoolMOS™
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 37.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 99 mOhm @ 18.1A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1.21mA
Chaje Gate (Qg) (Max) @ Vgs : 119nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2660pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 278W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263AB)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB