[12690PC Stock]
- Nimewo Pati:
- IRF3706
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 20V 77A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Tiristors - SCR - Modil yo and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF3706 electronic components. IRF3706 can be shipped within 24 hours after order. If you have any demands for IRF3706, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3706 Atribi pwodwi yo
Nimewo Pati :
IRF3706
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 20V 77A TO-220AB
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
77A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.8V, 10V
RD sou (Max) @ Id, Vgs :
8.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
2410pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
88W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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