SIZ926DT-T1-GE3 Pricing (USD) [162374PC Stock]
- 1 pcs$0.22893
- 3,000 pcs$0.22779
- Nimewo Pati:
- SIZ926DT-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2 N-CH 25V 8-POWERPAIR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - JFETs, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIZ926DT-T1-GE3 electronic components. SIZ926DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ926DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ926DT-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIZ926DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2 N-CH 25V 8-POWERPAIR
Seri :
TrenchFET® Gen IV
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Tc), 60A (Tc)
RD sou (Max) @ Id, Vgs :
4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
19nC @ 10V, 41nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
925pF @ 10V, 2150pF @ 10V
Pouvwa - Max :
20.2W, 40W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerWDFN
Pake Aparèy Founisè :
8-PowerPair® (6x5)
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