IRL40B215 Pricing (USD) [77749PC Stock]
- 1 pcs$1.10796
- 10 pcs$1.00135
- 100 pcs$0.80468
- 500 pcs$0.62585
- 1,000 pcs$0.51856
- Nimewo Pati:
- IRL40B215
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 40V 120A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRL40B215 electronic components. IRL40B215 can be shipped within 24 hours after order. If you have any demands for IRL40B215, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL40B215 Atribi pwodwi yo
Nimewo Pati :
IRL40B215
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 40V 120A
Seri :
HEXFET®, StrongIRFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.7 mOhm @ 98A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
84nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5225pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
143W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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