Toshiba Semiconductor and Storage - SSM3K56MFV,L3F

KEY Part #: K6421658

SSM3K56MFV,L3F Pricing (USD) [1298908PC Stock]

  • 1 pcs$0.22543
  • 10 pcs$0.16136
  • 100 pcs$0.09500
  • 500 pcs$0.05377
  • 1,000 pcs$0.04123

Nimewo Pati:
SSM3K56MFV,L3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 20V 0.8A VESM.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM3K56MFV,L3F electronic components. SSM3K56MFV,L3F can be shipped within 24 hours after order. If you have any demands for SSM3K56MFV,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3K56MFV,L3F Atribi pwodwi yo

Nimewo Pati : SSM3K56MFV,L3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 20V 0.8A VESM
Seri : U-MOSVII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 800mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 235 mOhm @ 800mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 1nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 55pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 150mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : VESM
Pake / Ka : SOT-723

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