[13288PC Stock]
- Nimewo Pati:
- RP1A090ZPTR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 12V 9A MPT6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Diodes - Rèkteur - Arrays and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RP1A090ZPTR electronic components. RP1A090ZPTR can be shipped within 24 hours after order. If you have any demands for RP1A090ZPTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RP1A090ZPTR Atribi pwodwi yo
Nimewo Pati :
RP1A090ZPTR
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET P-CH 12V 9A MPT6
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
12 mOhm @ 9A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
59nC @ 4.5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
7400pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
MPT6
Pake / Ka :
6-SMD, Flat Leads
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