DMG8601UFG-7 Pricing (USD) [438799PC Stock]
- 1 pcs$0.08471
- 3,000 pcs$0.08429
- Nimewo Pati:
- DMG8601UFG-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 6.1A DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG8601UFG-7 electronic components. DMG8601UFG-7 can be shipped within 24 hours after order. If you have any demands for DMG8601UFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG8601UFG-7 Atribi pwodwi yo
Nimewo Pati :
DMG8601UFG-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 20V 6.1A DFN
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.1A
RD sou (Max) @ Id, Vgs :
23 mOhm @ 6.5A, 4.5V
Vgs (th) (Max) @ Id :
1.05V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
143pF @ 10V
Pouvwa - Max :
920mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerUDFN
Pake Aparèy Founisè :
U-DFN3030-8
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