IAUC120N04S6N009ATMA1 Pricing (USD) [72424PC Stock]
- 1 pcs$0.53989
- Nimewo Pati:
- IAUC120N04S6N009ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 40V 120A PG-HSOG-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - IGBTs - Single, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IAUC120N04S6N009ATMA1 electronic components. IAUC120N04S6N009ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUC120N04S6N009ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUC120N04S6N009ATMA1 Atribi pwodwi yo
Nimewo Pati :
IAUC120N04S6N009ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 40V 120A PG-HSOG-8
Seri :
Automotive, AEC-Q101, OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
7V, 10V
RD sou (Max) @ Id, Vgs :
0.9 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
3.4V @ 90µA
Chaje Gate (Qg) (Max) @ Vgs :
115nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7360pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TDSON-8
Pake / Ka :
8-PowerTDFN
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