IPT65R195G7XTMA1 Pricing (USD) [54752PC Stock]
- 1 pcs$0.74131
- 2,000 pcs$0.73762
- Nimewo Pati:
- IPT65R195G7XTMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- HIGH POWERNEW.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPT65R195G7XTMA1 electronic components. IPT65R195G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPT65R195G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT65R195G7XTMA1 Atribi pwodwi yo
Nimewo Pati :
IPT65R195G7XTMA1
Manifakti :
Infineon Technologies
Deskripsyon :
HIGH POWERNEW
Seri :
CoolMOS™ C7
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
14A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
195 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 240µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
996pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
97W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-HSOF-8-2
Pake / Ka :
8-PowerSFN
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