MMIX1F420N10T Pricing (USD) [2818PC Stock]
- 1 pcs$16.98918
- 20 pcs$16.90466
- Nimewo Pati:
- MMIX1F420N10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 334A SMPD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS MMIX1F420N10T electronic components. MMIX1F420N10T can be shipped within 24 hours after order. If you have any demands for MMIX1F420N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MMIX1F420N10T Atribi pwodwi yo
Nimewo Pati :
MMIX1F420N10T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 334A SMPD
Seri :
GigaMOS™, HiperFET™, TrenchT2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
334A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.6 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
670nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4700pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
680W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
24-SMPD
Pake / Ka :
24-PowerSMD, 21 Leads
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