AUIRL7766M2TR Pricing (USD) [74240PC Stock]
- 1 pcs$0.52668
- 4,800 pcs$0.48309
- Nimewo Pati:
- AUIRL7766M2TR
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 10A DIRECTFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies AUIRL7766M2TR electronic components. AUIRL7766M2TR can be shipped within 24 hours after order. If you have any demands for AUIRL7766M2TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AUIRL7766M2TR Atribi pwodwi yo
Nimewo Pati :
AUIRL7766M2TR
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 10A DIRECTFET
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
10 mOhm @ 31A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
66nC @ 4.5V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
5305pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 62.5W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET™ M4
Pake / Ka :
DirectFET™ Isometric M4
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