STMicroelectronics - STGD4M65DF2

KEY Part #: K6423443

STGD4M65DF2 Pricing (USD) [220933PC Stock]

  • 1 pcs$0.16742
  • 2,500 pcs$0.14825
  • 5,000 pcs$0.14119

Nimewo Pati:
STGD4M65DF2
Manifakti:
STMicroelectronics
Detaye deskripsyon:
TRENCH GATE FIELD-STOP IGBT M S.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Modil pouvwa chofè and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGD4M65DF2 electronic components. STGD4M65DF2 can be shipped within 24 hours after order. If you have any demands for STGD4M65DF2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGD4M65DF2 Atribi pwodwi yo

Nimewo Pati : STGD4M65DF2
Manifakti : STMicroelectronics
Deskripsyon : TRENCH GATE FIELD-STOP IGBT M S
Seri : M
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 8A
Kouran - Pèseptè batman (Icm) : 16A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 4A
Pouvwa - Max : 68W
Oblije chanje enèji : 40µJ (on), 136µJ (off)
Kalite Antre : Standard
Gate chaje : 15.2nC
Td (on / off) @ 25 ° C : 12ns/86ns
Kondisyon egzamen an : 400V, 4A, 47 Ohm, 15V
Ranvèse Tan Reverse (trr) : 133ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : DPAK