Nimewo Pati :
STGD4M65DF2
Manifakti :
STMicroelectronics
Deskripsyon :
TRENCH GATE FIELD-STOP IGBT M S
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
8A
Kouran - Pèseptè batman (Icm) :
16A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 4A
Oblije chanje enèji :
40µJ (on), 136µJ (off)
Td (on / off) @ 25 ° C :
12ns/86ns
Kondisyon egzamen an :
400V, 4A, 47 Ohm, 15V
Ranvèse Tan Reverse (trr) :
133ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
DPAK