IXYS - IXXX200N65B4

KEY Part #: K6422831

IXXX200N65B4 Pricing (USD) [5041PC Stock]

  • 1 pcs$9.00192
  • 10 pcs$7.78541
  • 25 pcs$7.20157
  • 100 pcs$6.61760
  • 250 pcs$6.03369

Nimewo Pati:
IXXX200N65B4
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 650V 370A 1150W PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Modil pouvwa chofè and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXXX200N65B4 electronic components. IXXX200N65B4 can be shipped within 24 hours after order. If you have any demands for IXXX200N65B4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXXX200N65B4 Atribi pwodwi yo

Nimewo Pati : IXXX200N65B4
Manifakti : IXYS
Deskripsyon : IGBT 650V 370A 1150W PLUS247
Seri : GenX4™, XPT™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 370A
Kouran - Pèseptè batman (Icm) : 1000A
Vce (sou) (Max) @ Vge, Ic : 1.7V @ 15V, 160A
Pouvwa - Max : 1150W
Oblije chanje enèji : 4.4mJ (on), 2.2mJ (off)
Kalite Antre : Standard
Gate chaje : 553nC
Td (on / off) @ 25 ° C : 62ns/245ns
Kondisyon egzamen an : 400V, 100A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PLUS247™-3