Microsemi Corporation - APT8M100B

KEY Part #: K6398096

APT8M100B Pricing (USD) [15306PC Stock]

  • 1 pcs$2.96150
  • 10 pcs$2.64552
  • 100 pcs$2.16921
  • 500 pcs$1.75654
  • 1,000 pcs$1.48142

Nimewo Pati:
APT8M100B
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 1000V 8A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT8M100B electronic components. APT8M100B can be shipped within 24 hours after order. If you have any demands for APT8M100B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT8M100B Atribi pwodwi yo

Nimewo Pati : APT8M100B
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 1000V 8A TO-247
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.8 Ohm @ 4A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1885pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 290W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 [B]
Pake / Ka : TO-247-3

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