[1276PC Stock]
- Nimewo Pati:
- IRFH5110TR2PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 5X6 PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH5110TR2PBF electronic components. IRFH5110TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH5110TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5110TR2PBF Atribi pwodwi yo
Nimewo Pati :
IRFH5110TR2PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 5X6 PQFN
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Ta), 63A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
12.4 mOhm @ 37A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3152pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.6W (Ta), 114W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (5x6)
Pake / Ka :
8-PowerVDFN
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