Vishay Siliconix - SI9933CDY-T1-E3

KEY Part #: K6522942

SI9933CDY-T1-E3 Pricing (USD) [344842PC Stock]

  • 1 pcs$0.10726
  • 2,500 pcs$0.10093

Nimewo Pati:
SI9933CDY-T1-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2P-CH 20V 4A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI9933CDY-T1-E3 electronic components. SI9933CDY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI9933CDY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI9933CDY-T1-E3 Atribi pwodwi yo

Nimewo Pati : SI9933CDY-T1-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2P-CH 20V 4A 8SOIC
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A
RD sou (Max) @ Id, Vgs : 58 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 26nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 665pF @ 10V
Pouvwa - Max : 3.1W
Operating Tanperati : -50°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO

Ou ka enterese tou
  • IRF5810TRPBF

    Infineon Technologies

    MOSFET 2P-CH 20V 2.9A 6-TSOP.

  • FDY2000PZ

    ON Semiconductor

    MOSFET 2P-CH 20V 0.35A SOT-563F.

  • DMN2040LTS-13

    Diodes Incorporated

    MOSFET 2N-CH 20V 6.7A 8TSSOP.

  • DMN2019UTS-13

    Diodes Incorporated

    MOSFET 2N-CH 20V 5.4A TSSOP-8.

  • DMG8822UTS-13

    Diodes Incorporated

    MOSFET 2N-CH 20V 4.9A 8TSSOP.

  • AO8801AL

    Alpha & Omega Semiconductor Inc.

    MOSFET 2P-CH 20V 4.5A 8TSSOP.