Toshiba Semiconductor and Storage - SSM6L35FE,LM

KEY Part #: K6523188

SSM6L35FE,LM Pricing (USD) [1298908PC Stock]

  • 1 pcs$0.05267
  • 4,000 pcs$0.05240

Nimewo Pati:
SSM6L35FE,LM
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N/P-CH 20V 0.18A/0.1A ES6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM6L35FE,LM electronic components. SSM6L35FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6L35FE,LM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6L35FE,LM Atribi pwodwi yo

Nimewo Pati : SSM6L35FE,LM
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N/P-CH 20V 0.18A/0.1A ES6
Seri : -
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180mA, 100mA
RD sou (Max) @ Id, Vgs : 3 Ohm @ 50mA, 4V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 9.5pF @ 3V
Pouvwa - Max : 150mW
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : ES6 (1.6x1.6)

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