Nimewo Pati :
SSM6L35FE,LM
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N/P-CH 20V 0.18A/0.1A ES6
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180mA, 100mA
RD sou (Max) @ Id, Vgs :
3 Ohm @ 50mA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
9.5pF @ 3V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
ES6 (1.6x1.6)