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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTMFS5H419NLT1G

ON Semiconductor - NTMFS5H419NLT1G

KEY Part #: K6397181

NTMFS5H419NLT1G Pricing (USD) [115488PC Stock]

  • 1 pcs$0.32027
Nimewo Pati:
NTMFS5H419NLT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
T8 40V LOW COSS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - IGBTs - Single, Diodes - Zener - Arrays and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTMFS5H419NLT1G electronic components. NTMFS5H419NLT1G can be shipped within 24 hours after order. If you have any demands for NTMFS5H419NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS5H419NLT1G Atribi pwodwi yo

Nimewo Pati : NTMFS5H419NLT1G
Manifakti : ON Semiconductor
Deskripsyon : T8 40V LOW COSS
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 29A (Ta), 155A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 2.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.1W (Ta), 89W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)
Pake / Ka : 8-PowerTDFN, 5 Leads

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