Nimewo Pati :
PMV213SN,215
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 100V 1.9A SOT23
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
250 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
330pF @ 20V
Disipasyon Pouvwa (Max) :
280mW (Tj)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-236AB
Pake / Ka :
TO-236-3, SC-59, SOT-23-3